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F6103

SATCOM Receive SiGe IC

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  • 14GHz to 16GHz operation
  • 8 radiation elements
  • 20ns typical gain and phase settling time 
  • 3° typical RMS phase error
  • 0.3dB typical RMS gain error
  • 30dB gain attenuation range
  • 5-bit chip address
  • Integrated PTAT with external biasing
  • Internal temperature sensor
  • Up to 50MHz SPI control
  • Programmable on-chip memory

The F6103 is an 8-element receiver silicon IC designed using a SiGe BiCMOS process for 14GHz to 16GHz SATCOM, weather radar, test and measurement, and other phased array applications. The core IC has 6-bit phase control coupled with 30dB gain control on each channel to achieve fine beam steering and gain compensation between radiating elements. The device has 17dB nominal electric gain and -31dBm IP1dB. The core chip achieves an RMS phase error of 3° and an RMS gain error of 0.3dB over the frequency of operation.

The chip operates from 2.1V to 2.5V and features ESD protection on all pins. The core design includes standard SPI protocol that operates up to 50MHz with fast beam switching, fast beam-state loading, and fast four on-chip beam storage. The module has four external bias pins (5-bit DACs) to control external LNAs, temperature reporting, and external biasing.

Product Documents

Software & Tools - Evaluation Software

2025-08-25

F61xx/F62xx Evaluation Kit Software and Drivers

zip | 4.75 MB
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Part Number (1)

F6103NTGK8

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