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F6932

Dual-Channel Low Noise Amplifier for Ka-Band SATCOM

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  • Frequency: 17.7GHz – 21.2GHz
  • 获得: 22dB
  • Noise Figure: 1.2dB
  • Output P1dB: -2dBm
  • Power consumption: 15mW/ch
  • 电源电压: 1.2V nominal
  • Compact size for planar integration on ?/2 grid
  • 2.7 × 2.7 × 0.9 mm, 23-pin BGA
  • -40°C to +85°C ambient operating temperature 范围

The F6932 is an ultra-low power consumption, dual-channel, silicon on insulator (SOI) low noise amplifier (LNA) RFIC designed for 应用 in Ka?Band SATCOM planar phased array antennas. The exceptional combination of low power consumption, low noise, 高 获得, and compact size, maximizes the antenna array G/T while minimizing overall system power dissipation.

The F6932 includes two LNA channels in a compact 23-pin, 0.5mm pitch BGA 包裹. All inputs and outputs are single-ended and 50? matched for ease of integration onto phased array antenna panels.

产品文档

Product Brief

2025-08-25

Beamforming Ics for Satcom and 雷达 Active Antennas

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Product Brief

2025-08-25

Complete Line-up of mmWave Beamforming ICs

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Software & Tools - 其他

2025-08-25

F6932 S-Parameters

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Manual - Hardware

2025-08-25

F69xx Evaluation Board Manual

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Design & Development (Boards and Kit)

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F6932 Dual-Channel Low Noise Amplifier for Ka-Band SATCOM Evaluation Board

The Renesas F6932EVB evaluation board is designed to reduce the learning cycle, build system-level confidence, and enable a rapid time to market with the F6932 ultra-low power consumption, dual-channel, silicon on insulator (SOI) low noise amplifier (LNA) RFIC. The kit includes all the essential components required for the rapid validation and evaluation of the electrical performance characteristics of the F6932 dual-channel LNA. The board provides access to all pins and 功能ality to enable full evaluation and validation.

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部件号 (3)

RA81F6932GBX#BC0

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RA81F6932GBX#HC0

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RTKA81F6932000RU

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