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RF Power Amplifier Modules

Axiro offers RF Power Amplifier Modules built on robust GaN technology with advanced multi-die integration and compact form factors having 50 Ohms input and output interface. Engineered for wideband, DPD-friendly operation, they deliver high gain and efficiency with robust thermal performance, enabling carrier aggregation across 4G/5G FDD and TDD for macro, massive MIMO, and small-cell radio platforms.

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Part Number (1)

Supply Voltage (V)

5, 48

Lead Count

22

Gain (dB)

45

Packaging Dimension

20mm x 18mm LGA

Frequency Min Mhz

1800

Frequency Max Mhz

2200

Peak Power Typ Dbm

52.5

Die Technology

GaAs, GaN

Product Selector

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Part Number (1)
Supply Voltage (V)
Lead Count
Gain (dB)
Packaging Dimension
Frequency Min Mhz
Frequency Max Mhz
Peak Power Typ Dbm
Die Technology
5, 48 22 45 20mm x 18mm LGA 1800 2200 52.5 GaAs, GaN