Axiro offers RF Power Amplifier Modules built on robust GaN technology with advanced multi-die integration and compact form factors having 50 Ohms input and output interface. Engineered for wideband, DPD-friendly operation, they deliver high gain and efficiency with robust thermal performance, enabling carrier aggregation across 4G/5G FDD and TDD for macro, massive MIMO, and small-cell radio platforms.
CONTACT SALES1.8GHz to 2.2GHz 16W, 45dB Power Amplifier Module for 4G/5G Applications
Supply Voltage
5, 48
Lead Count
22
Gain
45
Packaging Dimension
20mm x 18mm LGA
Frequency Min Mhz
1800
Frequency Max Mhz
2200
Peak Power Typ Dbm
52.5
Die Technology
GaAs, GaN