Axiro offers RF Power Amplifier Modules built on robust GaN technology with advanced multi-die integration and compact form factors having 50 Ohms input and output interface. Engineered for wideband, DPD-friendly operation, they deliver high gain and efficiency with robust thermal performance, enabling carrier aggregation across 4G/5G FDD and TDD for macro, massive MIMO, and small-cell radio platforms.
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Supply Voltage (V)
5, 48
Lead Count
22
Gain (dB)
45
Packaging Dimension
20mm x 18mm LGA
Frequency Min Mhz
1800
Frequency Max Mhz
2200
Peak Power Typ Dbm
52.5
Die Technology
GaAs, GaN